contador Saltar al contenido

Samsung shows memories that will carry 10 or 12 GB RAM on new smartphones

Samsung presented a new line-up of all-in-one memory packages for smartphones that have the peculiarity of integrating both DRAM memory and storage memory. the first UFS-based multichip package (uMCP) of 12-gigabytes (GB) capable of providing high performance.

The announcement was made at the company's annual Samsung Tech Day at Device Solutions' US headquarters in San Jose, California.

"By using our cutting-edge LPDDR4X 24-gigabit (GB) chips, we are able to offer the maximum 12GB DRAM mobile capacity not only for high-end smartphones but also for mid-range devices," said Sewon Chun , Vice-Director General of Memory Marketing at Samsung Electronics.

ArsTecnica he explains that Samsung's UFS-based multichip packages (uMCP) integrate 10GB or 12GB of LPDDR4X-4266 memory (made using the second generation of a 10nm manufacturing process) and also NAND flash storage with UFS 3.0 interface.

As the new uMCP modules integrate four DRAM devices, they enable the new generation SoCs with quad-channel LPDDR4X memory controllers to reach a bandwidth of 34.1 GB / s. As far as NAND is concerned, the South Korean manufacturer does not indicate the possible storage capacities simply by explaining that the multi-chip uMCP can be supplied in various formats. The uMCP devices are mechanically compatible with the previous 8GB uMCPs generation, since they use the same 254FBGA package.

Samsung has presented multi-chip packages that will increase RAM and standard storage on mobile devices

Currently only very few high-end smartphones integrate 12 GB of LPDDR4X memory but according to the manufacturer i new uMCP will allow the arrival on the market of an ever larger number of phones with 10 GB or 12 GB of DRAM.

The new uMCPs are already in production and consequently smartphones with this type of memories should arrive in the coming months. The prices of the 10 GB uMCP and 12 GB uMCP chips are not known but should not be very different from equivalent DRAM and storage combinations.